125 Mono Wafer Specification
Dimension 125*125
Growth Method CZ
Conductive Type P
Dopant B
Orientation <100>
Off orientation <±2。
Resistivity 1-3Ω.cm
Bulk Lifetime ≥10us
Oxygen Content ≤1.0*1018/cm3
Carbon Content ≤5.0*1016/cm3
Dimension 125*125±0.5mm
Diagonal 150±0.5mm
Square Sides Angle 90±0.3•
Straight Sections Length Deviation 29.76±1.0mm
Thickness 200±20㎛
(minimum thickness≥180㎛)
TTV ≤30㎛
SawMark ≤15㎛
Warp ≤50㎛
Chips Lengh<0.5mm
Depth<0.3mm，
less than 2pcs
Appearance No stain, No pinhole and Cracks by Visual Inspection
